Foundation for Research & Technology Hellas (FORTH), Greece

FORTH participates in the project with the Microelectronics Research Group (MRG) of its Institute of Electronic Structure and Laser (IESL).

The Institute of Electronic Structure and Laser (IESL) of FORTH at Heraklion, Crete, is an internationally recognized center of excellence in Lasers and Applications, Microelectronics and Devices, Polymer Science and Theoretical and Computational Physics. Its aim is to sustain and advance basic and applied research in carefully selected areas, and also to promote and advance technology in Greece.

The Microelectronics Research Group (MRG) of its Institute of Electronic Structure and Laser (IESL). MRG was founded in 1986 and since then it has evolved into a unique, in Greece, full-scale research facility in compound semiconductor micro/nano-optoelectronics working on III-arsenides, III-nitrides, SiC, carbon electronics, oxides and tellurides . Over the years it has participated into many international projects (FP, ENIAC, NATO) like ESPRIT (Nos. 1270, 2035, 2289, 3086, 5018, 5031, 9500, 21315, 28998), RACE (No. 1027), BRITE/EURAM 5416, NATO Sfp “HP-HF SiC power devices”, NATO Sfp “SICPIN”, a US Army ERO on SiC power devices, “QN laser I”, “QN laser II”, “GaNANO”, “AMICOM”, “ULTRAGAN”, “BONTEC”, “PICMOS”, “MORGAN”, “TARGET”, “NANOTEC”, “SMARTPOWER”, “NANORF”, “MERCURE”, “NANOCOM”, “ARTEMOS”, “CLERMONT”, “ICARUS”, “INDEX”, POLAFLOW” “VISOSURF” and numerous national projects. To exploit its accumulated expertise, the group has launched a microelectronics services activity providing epitaxial wafers, processing and measurement services. The latter two are ISO 9001 certified. In 2005 FORTH was among the winners of the Descartes prize for its work on left handed materials. MRG disseminates its research in high quality journals including Science and Nature. MRG has been working with 1D and 2D material nano – fabrication since 2008 and with conventional semiconductors MMIC since its inauguration in 1986. Among the many technical skills developed is a complete MMIC fabrication platform and component library for GaAs (up to 77GHz) and GaN (up to 15 GHz) integrated microwave circuits. Recently (2015) a component library was created for processing of 2D (graphene) and CNT based electronics. In parallel SiC nanowire high voltage JFETs (2017) have been developed. The 2D / 1D activity has recently been enhanced by a new laboratory including CVD for growth of Carbon (CNT and graphene) and 2D sulfide based materials.

Resources:

Clean Rooms: Approximately 200 m2 of class-1000 for MBE and device fabrication. Material Growth: New MBE system (RIBER 32P) for nitrides with NH3 injector and N2 RF plasma sources, set-up for excimer Laser Assisted MBE (LAMBE) and MBE system with two coupled growth chambers (VG 80H/80S) for III-V and SiC-Si. Device Fabrication: wet chemistry sinks, photoresist spinners, UV and deep-UV mask aligners with backside alignment capability, FESEM Jeol 7000 with Raith nanolithography system, e-beam evaporator, RF and DC sputtering, thermal evaporators, rapid thermal annealing, sintering, bonding and wafer thinning and dicing, RIE and PECVD systems. Material Characterization: AFM, SEM and optical-Nomarski microscopes, contactless sheet resistance probe, electrochemical C-V profiling, Hall effect at 300 K and 77 K, DLTS, 14-300 K photoluminescence (PL), micro photoluminescence (μPL), electroluminescence (EL), modulated optical spectroscopies (PR, ER, PT), photocurrent (PC) and photovoltage (PV). Access to the UV Laser Facility (LSF) of IESL. Device testing: C-V, quasistatic I-V, EL spectra and efficiency, RF S-parameter, noise and power measurements up to 20 GHz, on-wafer RF probes.

Role in NanoSmart:

FORTH – IESL will lead WP3 (Fabrication activities)

• Focus on fabrication activities such as: CNT based complementary FET technology, 2D based FET technology, CNT based sensors, develop integration technology

Fabricate demonstrator sub-modules

Key personnel:

Dr. George Deligeorgis (male) earned his PhD in 2008 working on GaAs based Semiconductor laser diodes for telecommunication applications. Following his PhD, carbon-based devices (Graphene and CNTs) became his principal research interest. He stayed in LAAS-CNRS (Laboratory for analysis and architecture of Systems, National Center of Scientific Research), in France between 2010-2014 where he continued his activity in the same subject. He has recently (2015) accepted an Associate Researcher position in FORTH – IESL, Greece to work on high frequency graphene devices for radar applications. Dr. Deligeorgis has worked on numerous projects in design and fabrication of compound semiconductor devices in the field of photonics and high frequency electronics (MMIC) for the last decade. He was involved in several National and European funded projects in the fields of photonics, RF device fabrication and polaritonic devices. He is currently heading the graphene and nanofabrication activity in his group, working on nonlinear graphene based RF devices and polariton optoelectronics devices combining his knowledge in physics and nanotechnology. He has published more than 60 articles in peer-reviewed journals and has several invited and contributed talks. Finally, Dr. Deligeorgis is a founding member of the “Graphene Center, Greece”, member of the Steering board of Micro & Nano nanotechnology company, a member of several associations (IEEE e.t.c) and a reviewer in several international journals. Dr. Deligeorgis has more than 1300 citation and an h-index of 19.

Dr. George Konstantinidis (male) received his Ph.D degree in Solid State Electronics from the department of Electrical & Electronic Engineering of the University of Salford, UK in 1987. Since 1988 he has been working with the MRG/FORTH where he currently holds the position of Director of Research. Since 1991 he is heading the processing research activities of the group and has extensive experience in the processing of wide band gap semiconductors and carbon based materials. Since 1997, he has established an open services laboratory and since 2000 is the ISO 9001 quality system manager. He has participated in many European projects and he was the PI of MRG in 7 (FP7, ENIAC) international projects. He has attracted funding exceeding 4 M€. He was the project manager in the INCO-Copernicus MEMSWAVE project in which novel non-silicon RF MEMS components and circuits were fabricated at FORTH and which was among the runners up of the 2002 DESCARTES prize. In 2003 he received the Prize “Tudor Tanasescu” of the Romanian Academy of Sciences for his work in the RF MEMS. In 2005, he was a key member of the EXEL team that was among the winners of the 2005 Descartes prize. In 2003 he was elected to the Board of Directors of the European Microwave Association (EuMA) while in 2004 and 2007 he was elected as Vice President of the Greek Micro and Nano Society. He has more 125 publications in refereed journals. He has also numerous conference presentations including many invited ones. He has 5 chapters in books and holds 1 patent. He is an elected member of the Scientific Board of IESL-FORTH.

Mr. George Stavrinidis (male) received his undergraduate degree at Electronic Engineering, from the technical institute of Crete, Greece, He is currently a Researcher Technical Staff with the Microelectronics Research Group (MRG) of the Foundation for Research and Technology-Hellas (FORTH) in Heraklion, Crete, Greece. His research experience is fabrication and processing of III-V, III-Nitrides, and SiC semiconductors, Carbon based materials and MicroElectroMechanical Systems (MEMS) HEMTs, MMICs, Microneedles Dry electrodes, with an expertise at wire bonding and lapping techniques and electroplating techniques. The objective of his work involves the fabrication and processing for the development of nanoelectronic and optoelectronic devices.

Mrs. Maria Androulidaki (female) was born in Rethymnon, Greece in 1965. She studied physics at the University of Crete from 1983 to 1987. She received the master degree from Physics Department, University of Crete with specialist at Solid State Physics, in 1991. Since 1991 she is Research Assistant at Microelectronics group in IESL, FORTH. Her research interests include optical Characterization in semiconductor materials as photoluminescence, photoreflectance, photoconductivity, FTIR and Raman spectroscopy. She has more than 100 papers in scientific journals.

Mrs. Maria Kayampaki (female) received the B.Sc. degree in physics in 1992 from the University of Crete, Crete, Greece. Since then she is working with the Microelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL-FORTH), Heraklion, Crete, Greece. Her research activities involve the electrical and electrochemical Characterization of structures and devices of SiC, GaN and relative materials. She is co-author of more than 30 scientific papers.